Senior Director, GaN Technology

Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

We are seeking a Senior Director of GaN Technology to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.

The Senior Director of GaN Technology leads strategic R&D vision and epi/device/process architecture development activities for LV/MV/HV GaN power devices at Navitas. This role focuses on core innovation, managing relationships with external foundries, and driving the technology roadmap from concept to high-volume production. Key focus areas span the entire gamut of R&D activities from steering existing generation GaN technologies toward process freeze to developing the next-generation of world-leading power GaN technologies. The Senior Director of GaN Technology works closely with the internal business, operations teams as well as external foundry partners to deliver state of the art device technology platforms.

Key Responsibilities And Duties

• Technical Strategy and R&D Leadership: Define the long-term technical roadmap for GaN devices, driving innovation in material science, device/process design, and performance.
• Device/Process Development: Leading our GaN technology teams and be the key PoC on LV/MV/HV power GaN development on existing and next-gen technologies
• Foundry and Partner Management: Collaborate with external US and global foundries to manage wafer fabrication, process technology development, and yield engineering.
• Product Development and NPI: Closely collaborate with the New Product Introduction (NPI) process teams, ensuring GaN products meet quality, cost, and time-to-market goals.
• Packaging Technology: Work closely with internal and OSAT partners on high-performance packaging developments (e.g., Ag-sintering, flip-chip, embedding) to optimize thermal and electrical performance for high-volume production, specifically focused on die-package interactions on all new technologies
• Reliability and Characterization: Lead efforts in developing GaN-specific reliability models, test methods (DOE), and TCAD simulations for product verification.
• Team Leadership and Recruitment: Mentor and scale a high-performance R&D engineering team
  
  

Qualifications

Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)

• Strong analytical and problem-solving skills
• Excellent technical communication and negotiation abilities
• Comfortable working across cultures and global time zones
• Strong knowledge of power GaN design and fabrication methodologies
• Adequate knowledge of power GaN 100 V/650 V epitaxy
• Familiarity with power manufacturing eco-system including vendors and OSATs
• Experience with high-voltage and high-reliability applications
• Leading by example
  
  

Required Qualifications

• PhD degree in Electrical Engineering, Physics, or equivalent.
• 10 years in semiconductor R&D, with a strong background in GaN technology and power devices. Deep understanding of power semiconductor physics, particularly wide-bandgap devices (SiC, GaN).
• Experience with scaling 150 mm to 200 mm power GaN technology
• Demonstrated experience working with external foundries is preferred
• In-depth knowledge of GaN materials, epitaxial growth, device physics, and characterization techniques.
• Strong data analytics skills and exposure to machine learning for test optimization.
• Experience working with external test houses and test equipment suppliers.
  
  

What We Offer

• A front-row seat to the future of power electronics. Work on cutting-edge GaN and SiC technologies that are transforming AI data centers, electrification, and global energy infrastructure.
• A fast-paced, high-energy environment. We move quickly, make decisions with purpose, and empower employees to take ownership and drive real impact from day one.
• A team that shows up and delivers. We care deeply about our mission, our customers, and each other. We collaborate, support one another, and bring intensity and accountability to everything we do.
• Full support to succeed. You’ll have access to leadership, cross-functional collaboration, and the resources needed to innovate and execute at a high level.
• Competitive total rewards. Comprehensive health, dental, and vision coverage, unlimited PTO, and a competitive compensation package including base salary, performance bonus, and equity awards.