What are the responsibilities and job description for the Postdoctoral Research Associate in TCAD Device Design of Power and RF Wide Bandgap Semiconductor Devices position at University of Bristol - School of Physiology, Pharmacology and Neuroscience?
The role
Applications are invited for the role of Postdoctoral Researcher at the Centre for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball.
We are looking for a candidate with prior expertise in TCAD device simulations. This role encompasses TCAD device design of wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Ga2O3, also thermal simulations including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN and Ga2O3 power devices, and collaborate with our industrial partners spanning the semiconductor supply chain. In addition, you will collaborate with other team researchers that implement device structures in our state-of-the-art cleanroom, and with our semiconductor material growers that develop new material structures using our MOCVD Ga2O3 system and CVD diamond reactor. You will be supported by team members that perform thermal and electric field analysis of devices to validate the results of TCAD and thermal device simulations and our electrical characterization team. Moreover, if you have prior experimental expertise, you will have access a wide range of electrical/thermal test facilities.
The CDTR leads the £11M UKRI Innovation and Knowledge Centre REWIRE, a strategic national centre aimed at transforming next-generation wide and ultrawide bandgap semiconductor power electronics, and partners numerous European Space Agency (ESA) and DARPA programmes on high frequency, high power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) in 2020. You will have the opportunity to make a major impact on future semiconductor device technology supported by an inclusive, multi-national team.
What will you be doing?
You will conduct research to advance wide and ultra-wide bandgap semiconductor materials device technologies and its understanding.
Responsibilities include developing device simulation TCAD models to complement experiments and to support device design and to analyse device failure, breakdown and reliability.
You will develop thermal material/device thermal models for device design using finite element and other simulation tools and support short-term industrial contract.
You should apply if
Contract type: Open-ended with fixed funding until 31/03/2028
Work pattern: Full-Time, 35 hours per week
Grade: I/Pathway 2
Salary: £ 39,906 - £ 44,746 per annum
School/Unit: School of Physics
This advert will close at 23:59 UK time on 13/05/2026
Interviews will be held on 27/05/2026
For informal queries, please contact: (not applications) to Professor M. Kuball, martin.kuball@bristol.ac.uk, tel 44(0)117 928 8734.
The job title in the University of Bristol is known as Research Associate
Our strategy and mission
We recently launched our strategy to 2030 tying together our mission, vision and values.
The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.
Available documents
Applications are invited for the role of Postdoctoral Researcher at the Centre for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball.
We are looking for a candidate with prior expertise in TCAD device simulations. This role encompasses TCAD device design of wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Ga2O3, also thermal simulations including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN and Ga2O3 power devices, and collaborate with our industrial partners spanning the semiconductor supply chain. In addition, you will collaborate with other team researchers that implement device structures in our state-of-the-art cleanroom, and with our semiconductor material growers that develop new material structures using our MOCVD Ga2O3 system and CVD diamond reactor. You will be supported by team members that perform thermal and electric field analysis of devices to validate the results of TCAD and thermal device simulations and our electrical characterization team. Moreover, if you have prior experimental expertise, you will have access a wide range of electrical/thermal test facilities.
The CDTR leads the £11M UKRI Innovation and Knowledge Centre REWIRE, a strategic national centre aimed at transforming next-generation wide and ultrawide bandgap semiconductor power electronics, and partners numerous European Space Agency (ESA) and DARPA programmes on high frequency, high power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) in 2020. You will have the opportunity to make a major impact on future semiconductor device technology supported by an inclusive, multi-national team.
What will you be doing?
You will conduct research to advance wide and ultra-wide bandgap semiconductor materials device technologies and its understanding.
Responsibilities include developing device simulation TCAD models to complement experiments and to support device design and to analyse device failure, breakdown and reliability.
You will develop thermal material/device thermal models for device design using finite element and other simulation tools and support short-term industrial contract.
You should apply if
- Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience.
- Ideally with a good publication record.
- Extensive expertise required in TCAD device modelling.
- Desirable experience in finite element thermal modelling, physics-based modelling and electrical/thermal characterization of materials or devices.
- A willingness to work together with, and co-supervise, PhD students is necessary.
Contract type: Open-ended with fixed funding until 31/03/2028
Work pattern: Full-Time, 35 hours per week
Grade: I/Pathway 2
Salary: £ 39,906 - £ 44,746 per annum
School/Unit: School of Physics
This advert will close at 23:59 UK time on 13/05/2026
Interviews will be held on 27/05/2026
For informal queries, please contact: (not applications) to Professor M. Kuball, martin.kuball@bristol.ac.uk, tel 44(0)117 928 8734.
The job title in the University of Bristol is known as Research Associate
Our strategy and mission
We recently launched our strategy to 2030 tying together our mission, vision and values.
The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.
Available documents
- Science Engineering Further Particulars 2024-2025.pdf
- ACAD108363 - Research Associate- JD.pdf
Salary : $39,906 - $44,746