GaN Device Engineer

About GlobalFoundries: GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com. Summary of Role: GlobalFoundries' Research and Development and Product Line Organizations are looking for semiconductor engineers with industry experience in developing high performing GaN device technologies to join our team driving innovative fab based technology development in Burlington, VT. We are seeking experience in the field of GaN HEMT device design to support development in technologies and devices for leading edge solutions for a broad range of applications. Successful applicants will become a member of a broader center of excellence in GaN technology and part of a global development infrastructure driving innovation across dozens of technology platforms. Engineers with a Masters or Ph. D. degree and 1-2 years of industry R&D experience in Wide Bandgap semiconductor technologies are strongly preferred. Essential Responsibilities: Design, electrical characterization and analysis of GaN HEMT devices. Responsibilities include development, optimization, and qualification of advanced GaN devices for semiconductor foundry technologies. DC, RF and/or HV characterization as appropriate. Timely and accurate Data analysis Conduct theoretical studies or simulations to benchmark and optimize the device. Work closely with process, integration, TCAD, reliability and characterization teams. Lead team projects needed to achieve program goals. Other Responsibilities: Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. Required Qualifications: Education - Ph.D. with 1-2 years or master’s degree with 5 years of working experience in relevant field. Degree must be in Electrical Engineering, Solid State Physics, or other relevant engineering physical science discipline. Background in GaN (III-N) device physics, modeling, and characterization. Experience in s-parameter measurements or HV analysis. Experience in TCAD simulation. Strong data analysis skills – experience with data analysis tools and languages. Excellent interpersonal skills, both oral and written Language Fluency - English (Written & Verbal) Ability to relocate to Essex Junction, VT (this is not a remote position) Preferred Qualifications: Experience in GaN device simulation, design, characterization and qualification. Fundamental understanding of GaN material system – dispersion, buffer designs, GaN-on-Si, current collapse and drain/gate leakage mechanisms. Experience in leading a device or process development project. Experience in load-pull measurement and analysis. Field plate design fundamentals for high power designs. Semiconductor processing experience and understanding. Experience with Cadence or any other layout and simulation tool. Strong written, verbal communication, presentation and technical writing skills. Ability to work both independently and in an interdisciplinary team. Self-starter and highly motivated to succeed in a fast-paced and challenging professional environment. Results oriented and focused on quality of work Strong interpersonal skills and ability to work effectively within a global cross functional team environment. Excellent data analysis and problem-solving skills Project management skills - i.e., the ability to innovate and execute solutions that matter; the ability to navigate ambiguity. Strong planning & organizational skills. Expected Salary Range $79,100.00 - $145,800.00 The exact Salary will be determined based on qualifications, experience and location. If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law We shape what's essential At GlobalFoundries you will find a vibrant work environment where collaboration and innovation thrive. Our diverse and global team shares a culture of respect and inclusivity, representing the best in the industry. We celebrate success together and are united by our dedication to excellence and our desire to improve and empower the world.

Salary : $79,100 - $145,800