Senior Memory Technology Strategist

Company Description

Eugenus, Inc. is a San Jose–based semiconductor equipment company developing advanced ALD and CVD systems for next-generation semiconductor applications. With strong technical and manufacturing capabilities, Eugenus supports customers across advanced logic, memory, and specialty device applications by delivering innovative deposition and process solutions.

We work closely with leading semiconductor manufacturers, research institutions, and technology partners to address critical process integration challenges and enable future device scaling. Our mission is to develop differentiated equipment and process technologies that help customers solve complex manufacturing challenges and accelerate next-generation semiconductor innovation.

Role Description

We are looking for an experienced Senior Memory Technology Strategist with strong hands-on knowledge of advanced DRAM and NAND technologies.

The ideal candidate should have deep technical understanding of memory device structures, process flows, integration challenges, and manufacturing pain points across DRAM and NAND. Direct experience with advanced DRAM architectures such as 6F2, 4F2, emerging 3D-DRAM concepts, and 3D NAND structures and process integration is highly preferred.

This person should understand the practical challenges of manufacturing advanced memory devices, including scaling limitations, process complexity, yield-related issues, material selection, and integration tradeoffs. Experience across multiple memory process areas, including metals, dielectrics, liners, barriers, electrodes, contacts, integration, and module engineering, would be a strong advantage.

The person in this role will help translate memory technology challenges into clear technical and business opportunities. They will support the identification of target layers, process gaps, and customer pain points where new equipment, materials, or process solutions can create value. This role will also help align customer roadmaps, technology requirements, and internal product capabilities to support business development in advanced memory markets.

Qualifications

• Strong experience in DRAM and NAND process integration, device structures, or module engineering
• Solid understanding of 6F2 DRAM, 4F2 DRAM, emerging 3D-DRAM concepts, and 3D NAND architecture
• Knowledge of memory device scaling challenges, manufacturing limitations, and yield-related integration issues
• Experience with metals, dielectrics, liners, barriers, electrodes, contacts, and related process modules
• Familiarity with deposition, etch, treatment, and material integration challenges
• Ability to identify target layers and process gaps where new equipment or process solutions can add value
• Strong ability to connect technical challenges with customer needs, technology roadmaps, and business strategy
• Strong analytical, problem-solving, and project management skills
• Excellent communication and collaboration skills across technical, sales, and customer-facing teams

Preferred Experience

• 15 years of experience in advanced memory technology, process integration, device engineering, module engineering, or technology development
• Prior hands-on experience in high-volume manufacturing, R&D, or technology pathfinding for DRAM, NAND, or emerging memory devices
• Senior-level experience working across multiple process modules and technology generations is strongly preferred

Minimum Experience Requirement

• 15 years of relevant semiconductor industry experience, with significant experience in DRAM and/or NAND technology development, process integration, module engineering, or manufacturing
• 10 years of direct memory technology experience is strongly preferred
• Experience across multiple memory generations, including advanced DRAM, 3D NAND, and emerging memory architectures, is highly desirable